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IKP04N60T 데이터시트(Datasheet) 7 Page - Infineon Technologies AG

부품명 IKP04N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
7
Rev. 2.2 Dec-04
0A
2A
4A
6A
0.0m J
0.1m J
0.2m J
0.3m J
E
ts*
E
off
*) E
on a nd E tsin c lude lo sses
due to diode recovery
E
on*
25Ω 50Ω
100Ω
150Ω
200Ω
250Ω
0.0 mJ
0.1 mJ
0.2 mJ
0.3 mJ
0.4 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
25°C
50°C
75°C 100°C 125°C 150°C
0µJ
25µJ
50µJ
75µJ
100µJ
125µJ
150µJ
175µJ
E
ts*
E
on*
*) E
on an d E ts in clude lo sses
due to diode recovery
E
off
300V
350V
400V
450V
0.00m J
0.05m J
0.10m J
0.15m J
0.20m J
0.25m J
E
ts*
E
on*
*) E
on a nd E ts in clu de lo s s e s
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)




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