전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

IRFZ34NL 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRFZ34NL
상세내용  HEXFET® Power MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo 

   
 1 page
background image
IRFZ34NS/L
HEXFET® Power MOSFET
PD - 9.1311A
l Advanced Process Technology
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Description
VDSS = 55V
RDS(on) = 0.040Ω
ID = 29A
2
D
P a k
T O - 262
S
D
G
8/25/97
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
––––
2.2
RθJA
Junction-to-Ambient (PCB mount) **
––––
40
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V…
29
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
…
20
A
IDM
Pulsed Drain Current
…
100
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
68
W
Linear Derating Factor
0.45
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚…
130
mJ
IAR
Avalanche Current

16
A
EAR
Repetitive Avalanche Energy

5.6
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C




Html 페이지

1  2  3  4  5  6  7  8  9  10 


데이터시트



관련 부품명

부품명상세내용Html View제조사
IRF2907ZS-7PPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF3103HEXFET® Power MOSFET 1 2 3 4 5 MoreInterFET Corporation
IRLI2505HEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
MMSF10N02ZSINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS 1 2 3 4 5 MoreMotorola, Inc
MRF1507LATERAL NCHANNEL BROADBAND RF POWER MOSFET 1 2 3 4 5 MoreMotorola, Inc
MTSF3N02HDSINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS on = 0.040 OHM 1 2 3 4 5 MoreMotorola, Inc
NTMD6N03R2Power MOSFET 1 2 3 4 5 MoreON Semiconductor
IRFIZ48VPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
MMDF3N03HDPower MOSFET 3 Amps 30 Volts 1 2 3 4 5 MoreON Semiconductor
MSK3017THREE PHASE BRIDGE MOSFET POWER MODULE 1 2 3 4 5 M.S. Kennedy Corporation

링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl