전자부품 데이터시트 검색엔진 |
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KM62U256CLRG-10L 데이터시트(PDF) 8 Page - Samsung semiconductor |
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KM62U256CLRG-10L 데이터시트(HTML) 8 Page - Samsung semiconductor |
8 / 12 page ELECTRONICS KM62V256C, KM62U256C Family CMOS SRAM Revision 04 April 1996 - 8 - TIMING WAVEFORM OF WRITE CYCLE (/WE Controlled) Address /WE Data in /CS tWC tWP(1) tWHZ tWR(4) tDH tAS tCW(2) tOW Data out tAW tDW Data Valid Data Undefined TIMING WAVEFORM OF WRITE CYCLE (/CS Controlled) tWC tCW(2) tWR(4) tAW tWP(1) Address /CS /WE Data in Data out tDW Data Valid tAS High - Z High - Z DH t Notes (WRITE CYCLE) 1. A write occurs during the overlap(tWP) of a low /CS and low /WE. A write begins at the latest transition among /CS going low and /WE going low : A write end at the earliest transition among /CS going high and /WE going high, tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the later of /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS, or /WE going high. |
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유사한 설명 - KM62U256CLRG-10L |
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