1

Infrared Light Emitting Diodes

1: Anode

2: Cathode

Unit : mm

8˚

8˚

2.0

2-0.5

±0.1

0.15

0.5

±0.1

2-0.7 max.

2-R0.7

ø1.4

±0.2

2.8

±0.2

2-C0.5

2.8

±0.2

1.3

±0.2

1

2

Features

Two-way directivity

Small resin package

Long lifetime, high reliability

Thin type package modified from LN59

Applications

Light source for tape end sensor of VCR and video camera

recorder of VHS system

Light source for 2-bit photo sensor

LNA2701L

GaAs Bi-directional Infrared Light Emitting Diode

For light source of VCR (VHS System)

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

Power dissipation

75

mW

Forward current (DC)

50

mA

Pulse forward current

1A

Reverse voltage (DC)

3V

Operating ambient temperature

–25 to +65

˚C

Storage temperature

– 30 to +85

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Radiant intensity at center

1.2

mW/sr

Peak emission wavelength

λ

P

940

nm

Spectral half band width

∆λ

50

nm

Forward voltage (DC)

1.3

1.5

V

Reverse current (DC)

10

µA

Capacitance between pins

35

pF