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N02M083WL1AN-70I 데이터시트(PDF) 4 Page - NanoAmp Solutions, Inc.

부품명 N02M083WL1AN-70I
상세설명  2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
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제조업체  NANOAMP [NanoAmp Solutions, Inc.]
홈페이지  http://www.nanoamp.com
Logo NANOAMP - NanoAmp Solutions, Inc.

N02M083WL1AN-70I 데이터시트(HTML) 4 Page - NanoAmp Solutions, Inc.

  N02M083WL1AN-70I Datasheet HTML 1Page - NanoAmp Solutions, Inc. N02M083WL1AN-70I Datasheet HTML 2Page - NanoAmp Solutions, Inc. N02M083WL1AN-70I Datasheet HTML 3Page - NanoAmp Solutions, Inc. N02M083WL1AN-70I Datasheet HTML 4Page - NanoAmp Solutions, Inc. N02M083WL1AN-70I Datasheet HTML 5Page - NanoAmp Solutions, Inc. N02M083WL1AN-70I Datasheet HTML 6Page - NanoAmp Solutions, Inc. N02M083WL1AN-70I Datasheet HTML 7Page - NanoAmp Solutions, Inc. N02M083WL1AN-70I Datasheet HTML 8Page - NanoAmp Solutions, Inc. N02M083WL1AN-70I Datasheet HTML 9Page - NanoAmp Solutions, Inc.  
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The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Stock No. 23207-01 11/01/02
NanoAmp Solutions, Inc.
N02M083WL1A
Power Savings with Page Mode Operation (WE = VIH)
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Page Address (A4 - A17)
OE
CE1
CE2
Word Address (A0 - A3)
Open page
Word 1
Word 2
Word 16
...


유사한 부품 번호 - N02M083WL1AN-70I

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유사한 설명 - N02M083WL1AN-70I

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