전자부품 데이터시트 검색엔진 |
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SI3200-X-GS 데이터시트(PDF) 7 Page - Silicon Laboratories |
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SI3200-X-GS 데이터시트(HTML) 7 Page - Silicon Laboratories |
7 / 128 page Si3232 Preliminary Rev. 0.96 7 Power Consumption PSLEEP Sleep mode, RESET = 0, VBAT =–70 V — 8 — mW POPEN Open (high impedance), VBAT = –70 V — 65 — mW PSTBY Active on-hook standby, VBAT = –48 V — 70 — mW PSTBY Active on-hook standby, VBAT = –70 V — 80 — mW PACTIVE3 Forward/reverse active off-hook, ABIAS = 4 mA, VBAT =–24 V —175 — mW PACTIVE3 Forward/reverse active off-hook, ABIAS = 4 mA, VBAT =–48 V —280 — mW POHT Forward/reverse OHT, OBIAS = 4 mA, VBAT =–48 V —500 — mW POHT Forward/reverse OHT, OBIAS = 4 mA, VBAT =–70 V —685 — mW PRING Ringing, VRING =45Vrms, VBAT = –70 V, Sine Wave, 1 REN load2 —516 — mW Table 3. Power Supply Characteristics1 (Continued) (VDD, VDD1–VDD4 = 3.3 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade) Parameter Symbol Test Condition Min Typ Max Unit Notes: 1. All specifications are for a single channel based on measurements with both channels in the same operating state. 2. See “4.7.4. Ringing Power Considerations” for current and power consumption under other operating conditions. 3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must include an additional VBAT x ILIM term. |
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