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SI8417DB 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI8417DB 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 3 page 2 Vishay Siliconix SPICE Device Model Si8417DB www.vishay.com Document Number: 74135 S-52282 Rev. A, 31-Oct-05 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250µA 0.80 V On-State Drain Current a ID(on) VDS ≤ −5V, VGS = −4.5V 191 A VGS = −4.5V, ID = −1 A 0.0184 0.0174 VGS = −2.5V, ID = −1 Α 0.0211 0.0214 Drain-Source On-State Resistance a rDS(on) VGS = −1.8V, ID = −1 Α 0.0252 0.0270 Ω Forward Transconductance a gfs VDS = −4V, ID = −1 A 20 8.3 S Diode Forward Voltage a VSD IS = −1A, VGS = 0 V −0.78 −0.80 V Dynamic b Input Capacitance Ciss 3228 2220 Output Capacitance Coss 913 865 Reverse Transfer Capacitance Crss VDS = −6 V, VGS = 0 V, f = 1 MHz 542 555 pF VDS = −6 V, VGS = −5 V, ID = −1 A 25 38 Total Gate Charge Qg 23 35 Gate-Source Charge Qgs 7.3 7.3 Gate-Drain Charge Qgd VDS = −6 V, VGS = −4.5 V, ID = −1 A 5.9 5.9 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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