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SI7806BDN-T1-E3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI7806BDN-T1-E3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 73081 S-60790-Rev. B, 08-May-06 www.vishay.com 3 Vishay Siliconix Si7806BDN TYPICAL CHARACTERISTICS 25 °C unless noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 5 10 15 20 25 30 35 40 ID − Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 04 8 12 16 20 VDS = 15 V ID = 12.6 A Qg − Total Gate Charge (nC) VSD − Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 50 10 1 TJ = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 Crss Coss Ciss VDS − Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 12.6 A TJ − Junction Temperature (°C) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 02 4 6 8 10 VGS − Gate-to-Source Voltage (V) ID = 2 A ID = 12.6 A |
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