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SI7407DN 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI7407DN 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D Ultra-Low rDS(on) APPLICATIONS D Load Switch D PA Switch D Battery Switch Si7407DN Vishay Siliconix New Product Document Number: 71912 S-22122—Rev. B, 25-Nov-02 www.vishay.com 1 P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.012 @ VGS = -4.5 V -15.6 -12 0.016 @ VGS = -2.5 V - 13.5 0.024 @ VGS = -1.8 V -11 P-Channel MOSFET D G S 1 2 3 4 5 6 7 8 S S S G D D D D 3.30 mm 3.30 mm PowerPAK t 1212-8 Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -12 Gate-Source Voltage VGS "8 V _ a TA = 25_C - 15.6 -9.9 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID - 11.2 -7.2 Pulsed Drain Current IDM -30 A continuous Source Current (Diode Conduction)a IS -3.2 -1.3 TA = 25_C 3.8 1.5 Maximum Power Dissipationa TA = 85_C PD 2.0 0.8 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 10 sec 26 33 Maximum Junction-to-Ambienta Steady State RthJA 65 81 _C/W Maximum Junction-to-Case Steady State RthJC 1.9 2.4 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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