QFET

QFET

QFET

©2000 Fairchild Semiconductor International

January 2001

Rev. A1, January 2001

FQPF6N45

450V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply,

electronic lamp ballast based on half bridge.

Features

• Low gate charge ( typical 16 nC)

• Low Crss ( typical 11 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

Symbol

Parameter

FQPF6N45

Units

Drain-Source Voltage

450

V

Drain Current

4.0

A

2.5

A

Drain Current

- Pulsed

(Note 1)

16

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

350

mJ

Avalanche Current

(Note 1)

4.0

A

Repetitive Avalanche Energy

(Note 1)

4.2

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

42

W

- Derate above 25°C

0.34

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

2.98

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

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TO-220F

FQPF Series

G

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