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FQPF8N25 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FQPF8N25 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2000 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, May 2000 Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6.4mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 8.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 250 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.24 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 1 µA VDS = 200 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.75 A -- 0.42 0.55 Ω gFS Forward Transconductance VDS = 50 V, ID = 2.75 A -- 5.0 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 410 530 pF Coss Output Capacitance -- 85 110 pF Crss Reverse Transfer Capacitance -- 11 15 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 125 V, ID = 8.0 A, RG = 25 Ω -- 10 30 ns tr Turn-On Rise Time -- 95 200 ns td(off) Turn-Off Delay Time -- 11 35 ns tf Turn-Off Fall Time -- 42 95 ns Qg Total Gate Charge VDS = 200 V, ID = 8.0 A, VGS = 10 V -- 12 15 nC Qgs Gate-Source Charge -- 2.7 -- nC Qgd Gate-Drain Charge -- 5.9 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 8.0 A, dIF / dt = 100 A/µs -- 135 -- ns Qrr Reverse Recovery Charge -- 0.67 -- µC |
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