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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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APTGT400U120D4 데이터시트(PDF) 2 Page - Advanced Power Technology |
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APTGT400U120D4 데이터시트(HTML) 2 Page - Advanced Power Technology |
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2 / 3 page  APTGT400U120D4 APT website – http://www.advancedpower.com 2 - 3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 12mA 1200 V ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 8 mA Tj = 25°C 1.4 1.7 2.1 VCE(on) Collector Emitter on Voltage VGE = 15V IC = 400A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 12mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 28 Coes Output Capacitance 1.6 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.2 nF Td(on) Turn-on Delay Time 280 Tr Rise Time 90 Td(off) Turn-off Delay Time 550 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 400A RG = 1.8Ω 130 ns Td(on) Turn-on Delay Time 300 Tr Rise Time 100 Td(off) Turn-off Delay Time 650 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 400A RG = 1.8Ω 180 ns Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1.6 2.1 VF Diode Forward Voltage IF = 400A VGE = 0V Tj = 125°C 1.6 V Erec Reverse Recovery Energy IF = 400A VR = 600V di/dt =900A/µs Tj = 125°C 34 mJ Tj = 25°C 40 Qrr Reverse Recovery Charge IF = 400A VR = 600V di/dt =900A/µs Tj = 125°C 72 µC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.055 RthJC Junction to Case Diode 0.125 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 °C M6 3 5 Torque Mounting torque M4 1 2 N.m Wt Package Weight 420 g |
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