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2N2906 데이터시트(PDF) 2 Page - NXP Semiconductors |
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2N2906 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Jun 02 2 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver applications for industrial service. DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-18) and symbol. handbook, halfpage MAM263 1 3 2 3 1 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−60 V VCEO collector-emitter voltage open base 2N2906 −−40 V 2N2906A −−60 V IC collector current (DC) −−600 mA Ptot total power dissipation Tamb ≤ 25 °C − 400 mW hFE DC current gain IC = −150 mA; VCE = −10 V 40 120 fT transition frequency IC = −50 mA; VCE = −20 V; f = 100 MHz 200 − MHz toff turn-off time ICon = −150 mA; IBon = −15 mA; IBoff =15mA − 300 ns |
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