CSB857D datasheet(2/3 Pages) CDIL

부품명	CSB857D

상세설명	PNP / NPN PLASTIC POWER TRANSISTORS

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제조업체	CDIL [Continental Device India Limited]

홈페이지	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 2 of 3

CSB857, CSB858

CSD1133, CSD1134

Collector current

IC

max.

4.0

A

Collector current (Peak value)

IC

max.

8.0

A

Total power dissipation up to TC = 25°C

Ptot

max.

40

W

Junction temperature

Tj

max.

150

ºC

Storage temperature

Tstg

–65 to +150 ºC

CHARACTERISTICS

Tamb = 25°C unless otherwise specified

857

858

1133

1134

Collector cutoff current

IE = 0; VCB = 50V

ICBO

max.

1.0

µA

Breakdown voltages

IC = 50 mA; IB = 0

VCEO

min.

50

60 V

IC = 10 µA; IE = 0

VCBO

min.

70

V

IE = 10 µA; IC = 0

VEBO

min.

5.0

V

Saturation voltage

IC = 2 A; IB = 0.2 A

VCEsat*

max.

1.0

V

Base emitter on voltage

IC = 1 A; VCE = 4 V

VBE(on)*

max.

1.0

V

D.C. current gain

IC = 0.1 A; VCE = 4 V

hFE*

min.

35

IC = 1.0 A; VCE = 4 V**

hFE*

min.

60

max.

320

Transition frequency

IC = 0.5 A; VCE = 4 V

PNP

fT

typ.

15

MHz

NPN

typ.

7.0

MHz

** hFE classification: B: 60-120 C: 100-200 D: 160-320

* Pulse test

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유사한 부품 번호 - CSB857D

유사한 설명 - CSB857D

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