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1N4737C 데이터시트(PDF) 1 Page - EIC discrete Semiconductors

부품명 1N4737C
상세설명  SILICON ZENER DIODES
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제조업체  EIC [EIC discrete Semiconductors]
홈페이지  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

1N4737C 데이터시트(HTML) 1 Page - EIC discrete Semiconductors

  1N4737C Datasheet HTML 1Page - EIC discrete Semiconductors 1N4737C Datasheet HTML 2Page - EIC discrete Semiconductors  
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1N4728C - 1N4764C
Z1110C - Z1300C
VZ : 3.3 - 300 Volts
PD : 1 Watt
FEATURES :
* Complete voltage range 3.3 to 300 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS
Rating at 25
°C ambient temperature unless otherwise specified.
Rating
Symbol
Value
Unit
DC Power Dissipation at TL = 50 °C (Note1)
PD
1.0
Watt
Maximum Forward Voltage at IF = 200 mA
VF
1.2
Volts
Maximum Thermal Resistance Junction to Ambient Air (Note2)
RӨJA
170
K / W
Junction Temperature Range
TJ
- 55 to + 175
°C
Storage Temperature Range
TSTG
- 55 to + 175
°C
Notes :
(1) TL = Lead temperature at 3/8 " (9.5mm) from bod
y
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from ca
se
0
25
50
75
100
125
150
175
TL, LEAD TEMPERATURE (
°C)
Page 1 of 2
Rev. 04 : May 27, 2006
SILICON ZENER DIODES
0.25
0.50
0.75
1.00
1.25
L = 3/8" (9.5mm)
Fig. 1 POWER TEMPERATURE DERATING CURVE
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
Certificate TH97/10561QM
Certificate TW00/17276EM


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