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2PB1219AR 데이터시트(PDF) 2 Page - NXP Semiconductors |
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2PB1219AR 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 12 2 Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A FEATURES • High current (max. 500 mA) • Low voltage (max. 50 V) • Low collector-emitter saturation voltage (max. 600 mV). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323; SC70 plastic package. NPN complement: 2PD1820A. MARKING Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. TYPE NUMBER MARKING CODE(1) 2PB1219AQ D ∗Q 2PB1219AR D ∗R 2PB1219AS D ∗S PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT323; SC70) and symbol. handbook, halfpage MAM048 Top view 2 1 3 2 3 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Refer to SOT323; SC70 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−60 V VCEO collector-emitter voltage open base −−50 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−500 mA ICM peak collector current −−1A IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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