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2PB710AQ 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 2PB710AQ
상세설명  PNP general purpose transistor
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PB710AQ 데이터시트(HTML) 3 Page - NXP Semiconductors

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1999 May 31
3
Philips Semiconductors
Product specification
PNP general purpose transistor
2PB710A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −60 V
−−10
nA
IE = 0; VCB = −60 V; Tj = 150 °C
−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−10
nA
hFE
DC current gain
IC = −150 mA; VCE = −10 V; note 1
2PB710AQ
85
170
2PB710AR
120
240
2PB710AS
170
340
DC current gain
IC = −500 mA; VCE = −10 V; note 1
40
VCEsat
collector-emitter saturation voltage IC = −300 mA; IB = −30 mA; note 1
−−600
mV
VBEsat
base-emitter saturation voltage
IC = −300 mA; IB = −30 mA; note 1
−−1.5
V
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
15
pF
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 100 MHz; note 1
2PB710AQ
100
MHz
2PB710AR
120
MHz
2PB710AS
140
MHz


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