KM681000CLP-5 datasheet(2/10 Pages) SAMSUNG

부품명	KM681000CLP-5

상세설명	128K x8 bit Low Power CMOS Static RAM

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제조업체	SAMSUNG [Samsung semiconductor]

홈페이지	http://www.samsung.com/Products/Semiconductor

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PRELIMINARY

KM681000C Family

CMOS SRAM

Revision 2.0

November 1997

2

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION

The KM681000C families are fabricated by SAMSUNG

′s

advanced CMOS process technology. The families support

various operating temperature ranges and have various

package types for user flexibility of system design. The fami-

lies also support low data retention voltage for battery back-

up operation with low data retention current.

FEATURES

• Process Technology: TFT

• Organization: 128K x8

• Power Supply Voltage: 4.5~5.5V

• Low Data Retention Voltage: 2V(Min)

• Three state output and TTL Compatible

• Package Type: 32-DIP-600, 32-SOP-525,

32-TSOP1-0820F/R

PIN DESCRIPTION

PRODUCT FAMILY

Product Family

Operating Temperature

Vcc Range

Speed

Power Dissipation

PKG Type

Standby

(ISB1, Max)

Operating

(ICC2, Max)

KM681000CL

Commercial(0~70

°C)

4.5~5.5V

55/70ns

50

µA

10

µA

60mA

32-DIP, 32-SOP

32-TSOP1-F/R

KM681000CL-L

KM681000CLI

Industrial(-40~85

°C)

70ns

50

µA

15

µA

32-SOP

32-TSOP1-F/R

KM681000CLI-L

FUNCTIONAL BLOCK DIAGRAM

32-TSOP

Type1 - Reverse

A11

A9

A8

A13

WE

CS2

A15

VCC

N.C

A16

A14

A12

A7

A6

A5

A4

OE

A10

CS1

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A0

A1

A2

A3

32-TSOP

Type1 - Forward

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

N.C

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O1

I/O2

I/O3

VSS

VCC

A15

CS2

WE

A13

A8

A9

A11

OE

A10

CS1

I/O8

I/O7

I/O6

I/O5

I/O4

32-DIP

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32-SOP

A11

A9

A8

A13

WE

CS2

A15

VCC

N.C

A16

A14

A12

A7

A6

A5

A4

OE

A10

CS1

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A0

A1

A2

A3

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

Precharge circuit.

Memory array

1024 rows

128

×8 columns

I/O Circuit

Column select

Clk gen.

Row

select

A0

A1

A2

A3

A9

A11

A10

A4

A5

A6

A7

A8

A12

A14

I/O1

Data

cont

I/O8

A13

A15

A16

VCC

VSS

CS1

WE

OE

Control

logic

CS2

Data

cont

Name

Function

Name

Function

CS1,CS2

Chip Select Inputs

I/O1~I/O8

Data Inputs/Out-

OE

Output Enable

Vcc

Power

WE

Write Enable

Vss

Ground

A0~A16

Address Inputs

N.C

No Connection

유사한 부품 번호 - KM681000CLP-5

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	KM681000	192Kb / 11P	128K x8 bit Low Power CMOS Static RAM
	KM681000B	192Kb / 11P	128K x8 bit Low Power CMOS Static RAM
	KM681000BL	192Kb / 11P	128K x8 bit Low Power CMOS Static RAM
	KM681000BL-L	192Kb / 11P	128K x8 bit Low Power CMOS Static RAM
	KM681000BLE	192Kb / 11P	128K x8 bit Low Power CMOS Static RAM

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유사한 설명 - KM681000CLP-5

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	KM681000B	192Kb / 11P	128K x8 bit Low Power CMOS Static RAM
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	K6T1008V2C-TB70	149Kb / 11P	128K x8 bit Low Power and Low Voltage CMOS Static RAM
Emerging Memory & Logic...	EM610FV8T	188Kb / 11P	128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
	EM610FV8	70Kb / 11P	128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
	EM610FV8S	67Kb / 11P	128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
	EM641FT8V	435Kb / 11P	512K x8 bit Low Power Full CMOS Static RAM
	EM641FT8	387Kb / 10P	512K x8 bit Low Power Full CMOS Static RAM
	EM641FT8S	863Kb / 11P	512K x8 bit Low Power Full CMOS Static RAM
	EM641FT8T	475Kb / 11P	512K x8 bit Low Power Full CMOS Static RAM

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KM681000CLP-5 데이터시트(PDF) 2 Page - Samsung semiconductor

KM681000CLP-5 데이터시트(HTML) 2 Page - Samsung semiconductor

유사한 부품 번호 - KM681000CLP-5

유사한 설명 - KM681000CLP-5

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