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GS8662R08E-333I 데이터시트(PDF) 11 Page - GSI Technology

부품명 GS8662R08E-333I
상세설명  72Mb SigmaCIO DDR-II Burst of 4 SRAM
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제조업체  GSI [GSI Technology]
홈페이지  http://www.gsitechnology.com
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Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
11/37
© 2005, GSI Technology
FLXDrive-II Output Driver Impedance Control
HSTL I/O SigmaCIO DDR-II SRAMs are supplied with programmable impedance output drivers. The ZQ pin must be connected
to VSS via an external resistor, RQ, to allow the SRAM to monitor and adjust its output driver impedance. The value of RQ must be
5X the value of the desired RAM output impedance. The allowable range of RQ to guarantee impedance matching continuously is
between 150
Ω and 300Ω. Periodic readjustment of the output driver impedance is necessary as the impedance is affected by drifts
in supply voltage and temperature. The SRAM’s output impedance circuitry compensates for drifts in supply voltage and
temperature. A clock cycle counter periodically triggers an impedance evaluation, resets and counts again. Each impedance
evaluation may move the output driver impedance level one step at a time towards the optimum level. The output driver is
implemented with discrete binary weighted impedance steps. Updates of pull-down drive impedance occur whenever a driver is
producing a “1” or is High-Z. Pull-up drive impedance is updated when a driver is producing a “0” or is High-Z.
Common I/O SigmaCIO DDR-II B4 SRAM Truth Table
Kn
LD
R/W
DQ
Operation
A + 0
A + 1
A + 2
A + 3
1
X
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Deselect
0
0
D@Kn+1
D@Kn+1
D@Kn+2
D@Kn+2
Write
0
1
Q@Kn+1
or
Cn+1
Q@Kn+2
or
Cn+2
Q@Kn+2
or
Cn+2
Q@Kn+3
or
Cn+3
Read
Note:
Q is controlled by K clocks if C clocks are not used.


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