GS78108AB

1M x 8

8Mb Asynchronous SRAM

8, 10, 12 ns

BGA

Commercial Temp

Industrial Temp

Rev: 1.04 5/2006

1/11

© 2003, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Features

• Fast access time: 8, 10, 12 ns

• CMOS low power operation: 240/190/170 mA at minimum

cycle time

• Single 3.3 V ± 0.3 V power supply

• All inputs and outputs are TTL-compatible

• Fully static operation

• Industrial Temperature Option: –40° to 85°C

• 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array

package

• RoHS-compliant package available

Description

The GS78108A is a high speed CMOS Static RAM organized

as 1,048,576-words by 8-bits. Static design eliminates the need

for external clocks or timing strobes. The GS78108operates on

a single 3.3 V power supply, and all inputs and outputs are

TTL-compatible. The GS7810A8 is available in a

14 mm x 22 mm BGA package.

Symbol

Description

Address input

Data input/output

CE

Chip enable input

WE

Write enable input

OE

Output enable input

+3.3 V power supply

Ground

NC

No connect

Pin Descriptions

Memory Array

Row

Decoder

Column

Decoder

Address

Input

Buffer

Control

I/O Buffer

CE

WE

OE

Block Diagram