H01N60SJ datasheet(2/5 Pages) HSMC

부품명	H01N60SJ

상세설명	N-Channel Power Field Effect Transistor

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제조업체	HSMC [Hi-Sincerity Mocroelectronics]

홈페이지	http://www.hsmc.com.tw

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200501

Issued Date : 2005.01.01

Revised Date : 2005.09.28

Page No. : 2/5

H01N60SI, H01N60SJ

HSMC Product Specification

Thermal Characteristics

Symbol

Parameter

Value

Units

RθJC

Thermal Resistance Junction to Case Max.

4.5

°C/W

RθJA

Thermal Resistance Junction to Ambient Max.

110

°C/W

ELectrical Characteristics (T

J=25°C, unless otherwise specified)

Symbol

Characteristic

Min.

Typ.

Max.

Unit

• Off Characteristics

V

DSS

Drain-Source Breakdown Voltage (V

GS=0V, ID=250uA)

600

-

V

∆BV

DSS/∆TJ

Breakdown Voltage Temperature Coefficient (I

D=250uA, Referenced

to 25

oC)

-0.6

-

V/

oC

Zero Gate Voltage Drain Current (V

DS=600V, VGS=0V)

-

1

uA

I

DSS

Zero Gate Voltage Drain Current (V

DS=480V, Tj=125°C)

-

50

uA

I

GSSF

Gate-Body Leakage Current-Forward (V

GS=30V, VDS=0V)

-

100

nA

I

GSSR

Gate-Body Leakage Current-Reverse (V

GS=-30V, VDS=0V)

-

-100

nA

• On Characteristics

V

GS(th)

Gate Threshold Voltage (V

DS=VGS, ID=250uA)

2

-

4

V

R

DS(on)

Static Drain-Source On-Resistance (V

GS=10V, ID=0.6A)

*3

--

12

Ω

g

FS

Forward Transconductance (V

DS=40V, ID=0.5A)

*3

-0.75

-

S

• Dynamic Characteristics

C

iss

Input Capacitance

-

210

250

C

oss

Output Capacitance

-

19

25

C

rss

Reverse Transfer Capacitance

V

GS=0V, VDS=25V, f=1MHz

-4

8

pF

• Switching Characteristics

t

d(on)

Turn-on Delay Time

-

30

t

r

Turn-on Rise Time

-

60

t

d(off)

Turn-off Delay Time

-

45

t

f

Turn-off Fall Time

V

DD=300V, ID=1.1A

R

G=25Ω

*3

--

75

ns

Q

g

Total Gate Charge

-

15

20

Q

gs

Gate-Source Charge

-

4

-

Q

gd

Gate-Drain Charge

V

DS=480V, ID=1.1A

V

GS=10V

*3

-3

-

nC

• Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current

-

1

A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current

-

4

A

V

SD

Drain-Source Diode Forward Voltage (V

GS=0V, IS=1A)

-

1.4

V

t

rr

Reverse Recovery Time (V

GS=0V, IS=1.1A, dlF/dt=100A/us)

*3

-

190

-

ns

Qrr

Reverse Recovery Charge (V

GS=0V, IS=1.1A, dlF/dt=100A/us)

*3

-0.53

-

nC

*3: Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

유사한 부품 번호 - H01N60SJ

제조업체	부품명	데이터시트	상세설명
Hi-Sincerity Mocroelect...	H01N60	59Kb / 5P	N-Channel Power Field Effect Transistor
	H01N60I	59Kb / 5P	N-Channel Power Field Effect Transistor
	H01N60J	59Kb / 5P	N-Channel Power Field Effect Transistor

More results

유사한 설명 - H01N60SJ

제조업체	부품명	데이터시트	상세설명
Hi-Sincerity Mocroelect...	H06N60	71Kb / 6P	N-Channel Power Field Effect Transistor
	H01N45A	44Kb / 4P	N-Channel Power Field Effect Transistor
	H03N60	59Kb / 5P	N-Channel Power Field Effect Transistor
	H07N65	168Kb / 6P	N-Channel Power Field Effect Transistor
	H02N60	74Kb / 6P	N-Channel Power Field Effect Transistor
	H02N60S	77Kb / 6P	N-Channel Power Field Effect Transistor
	H05N60	60Kb / 5P	N-Channel Power Field Effect Transistor
	H07N60	61Kb / 5P	N-Channel Power Field Effect Transistor
	H01N60	59Kb / 5P	N-Channel Power Field Effect Transistor
	H02N65	171Kb / 6P	N-Channel Power Field Effect Transistor

More results

H01N60SJ 데이터시트(PDF) 2 Page - Hi-Sincerity Mocroelectronics

H01N60SJ 데이터시트(HTML) 2 Page - Hi-Sincerity Mocroelectronics

유사한 부품 번호 - H01N60SJ

유사한 설명 - H01N60SJ

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