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H04N60E 데이터시트(PDF) 2 Page - Hi-Sincerity Mocroelectronics

부품명 H04N60E
상세설명  N-Channel Power Field Effect Transistor
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제조업체  HSMC [Hi-Sincerity Mocroelectronics]
홈페이지  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics

H04N60E 데이터시트(HTML) 2 Page - Hi-Sincerity Mocroelectronics

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 2/5
H04N60E, H04N60F
HSMC Product Specification
Thermal Characteristics
Symbol
Parameter
Value
Units
TO-220AB
1.3
RθJC
Thermal Resistance Junction to Case Max.
TO-220FP
5
°C/W
RθJA
Thermal Resistance Junction to Ambient Max.
62.5
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-Source Breakdown Voltage (V
GS=0V, ID=250uA)
600
-
-
V
Drain-Source Leakage Current (V
DS=600V, VGS=0V)
-
-
1
uA
I
DSS
Drain-Source Leakage Current (V
DS=480V, VGS=0V, Tj=125°C)
-
-
50
uA
I
GSSF
Gate-Source Leakage Current-Forward (V
gsf=30V, VDS=0V)
-
-
100
nA
I
GSSR
Gate-Source Leakage Current-Reverse (V
gsr=-30V, VDS=0V)
-
-
-100
nA
V
GS(th)
Gate Threshold Voltage (V
DS=VGS, ID=250uA)
2
-
4
V
R
DS(on)
Static Drain-Source On-Resistance (V
GS=10V, ID=2A)*
-
-
2.2
g
FS
Forward Transconductance (V
DS=15V, ID=2A)*
2
-
-
mhos
C
iss
Input Capacitance
-
540
-
C
oss
Output Capacitance
-
125
-
C
rss
Reverse Transfer Capacitance
V
GS=0V, VDS=25V, f=1MHz
-8
-
pF
t
d(on)
Turn-on Delay Time
-
12
-
t
r
Rise Time
-
7
-
t
d(off)
Turn-off Delay Time
-
19
-
t
f
Fall Time
(V
DD=300V, ID=4A, RG=9.1Ω,
V
GS=10V)*
-10
-
ns
Q
g
Total Gate Charge
-
5
-
Q
gs
Gate-Source Charge
-
2.7
-
Q
gd
Gate-Drain Charge
(V
DS=480V, ID=4A, VGS=10V)*
-2
-
nC
L
D
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
-4.5
-
nH
L
S
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
-7.5
-
nH
*: Pulse Test: Pulse Width
≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Characteristic
Min.
Typ.
Max.
Units
V
SD
Forward On Voltage(1)
I
S=4A, VGS=0V, TJ=25
oC-
-
1.6
V
t
on
Forward Turn-On Time
-
**
-
ns
t
rr
Reverse Recovery Time
I
S=2A, VGS=0V, dIS/dt=100A/us
-
302
-
ns
**: Negligible, Dominated by circuit inductance


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