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IKP01N120H2 데이터시트(PDF) 2 Page - Infineon Technologies AG

부품명 IKP01N120H2
상세설명  HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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IKP01N120H2
Power Semiconductors
2
Rev. 2.3
May 06
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
4.5
Diode thermal resistance,
Junction - case
RthJCD
11
Thermal resistance,
junction – ambient
RthJA
PG-TO-220-3-1
62
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V, IC=300µA
1200
-
-
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=1A
Tj=25°C
Tj=150°C
VGE = 10V, IC=1A,
Tj=25°C
-
-
-
2.2
2.5
2.4
2.8
-
-
Gate-emitter threshold voltage
VGE(th)
IC=30µA,VCE=VGE
2.1
3
3.9
V
Zero gate voltage collector current
ICES
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
20
80
µA
Diode forward voltage
VF
VGE = 0, IF=0.5A
Tj=25°C
Tj=150°C
-
-
2.0
1.75
2.5
-
V
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
40
nA
Transconductance
gfs
VCE=20V, IC=1A
-
0.75
-
S
Dynamic Characteristic
Input capacitance
Ciss
-
91.6
-
Output capacitance
Coss
-
9.8
-
Reverse transfer capacitance
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
3.4
-
pF
Gate charge
QGate
VCC=960V, IC=1A
VGE=15V
-
8.6
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
-
7
-
nH


유사한 부품 번호 - IKP01N120H2

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유사한 설명 - IKP01N120H2

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