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IKP06N60T 데이터시트(Datasheet) 3 Page - Infineon Technologies AG

부품명 IKP06N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKP06N60T
TrenchStop series
p
Power Semiconductors
3
Rev. 2.2 May 06
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
9
-
Rise time
tr
-
6
-
Turn-off delay time
td(off)
-
130
-
Fall time
tf
-
58
-
ns
Turn-on energy
Eon
-
0.09
-
Turn-off energy
Eoff
-
0.11
-
Total switching energy
Ets
Tj=25°C,
VCC=400V,IC=6A,
VGE=0/15V,
RG=23Ω,
Lσ
2) =60nH,
Cσ
2) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.2
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
123
-
ns
Diode reverse recovery charge
Qrr
-
190
-
nC
Diode peak reverse recovery current
Irrm
-
5.3
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25°C,
VR=400V, IF=6A,
diF/dt=550A/µs
-
450
-
A/
µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
9
-
Rise time
tr
-
8
-
Turn-off delay time
td(off)
-
165
-
Fall time
tf
-
84
-
ns
Turn-on energy
Eon
-
0.14
-
Turn-off energy
Eoff
-
0.18
-
Total switching energy
Ets
Tj=175°C,
VCC=400V,IC=6A,
VGE=0/15V,
RG= 23Ω
Lσ
1) =60nH,
Cσ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.335
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
180
-
ns
Diode reverse recovery charge
Qrr
-
500
-
nC
Diode peak reverse recovery current
Irrm
-
7.6
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=175°C
VR=400V, IF=6A,
diF/dt=550A/µs
-
285
-
A/
µs
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.




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