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IKP06N60T 데이터시트(Datasheet) 9 Page - Infineon Technologies AG

부품명 IKP06N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKP06N60T
TrenchStop series
p
Power Semiconductors
9
Rev. 2.2 May 06
1µs10µs 100µs 1ms
10ms 100ms
10
-2K/W
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
1µs10µs 100µs 1ms
10ms 100ms
10
-2K/W
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
200A/µs
400A/µs
600A/µs
800A/µs
0ns
50ns
100ns
150ns
200ns
250ns
T
J=25°C
T
J=175°C
200A/µs
400A/µs
600A/µs
800A/µs
0,0µC
0,1µC
0,2µC
0,3µC
0,4µC
0,5µC
T
J=25°C
T
J=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=400V, IF=6 A,
Dynamic test circuit in Figure E)
R
,( K/ W )
τ , (s )
0.3837
5.047*10
-2
0.4533
4.758*10
-3
0.5877
4.965*10
-4
0.2483
4.717*10
-5
C 1=
τ1/R1
R 1
R2
C 2=
τ2/R2
R
,( K/ W )
τ , (s )
0.2520
4.849*10
-2
0.4578
1.014*10
-2
1.054
1.309*10
-3
0.7822
1.343*10
-4
C 1=
τ1/R1
R 1
R2
C 2=
τ2/R2




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