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IKP06N60T 데이터시트(Datasheet) 10 Page - Infineon Technologies AG

부품명 IKP06N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKP06N60T
TrenchStop series
p
Power Semiconductors
10
Rev. 2.2 May 06
200A/µs
400A/µs
600A/µs
800A/µs
0A
2A
4A
6A
8A
T
J=2 5 °C
T
J=1 7 5 °C
200A/µs
400A/µs
600A/µs
800A/µs
0A/µs
-100A/µs
-200A/µs
-300A/µs
-400A/µs
-500A/µs
T
J=25°C
T
J=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
0V
1V
2V
0A
2A
4A
6A
8A
10A
25°C
T
J=175°C
0°C
50°C
100°C
150°C
0,0V
0,5V
1,0V
1,5V
2,0V
6A
I
F=1 2A
3A
VF, FORWARD VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature




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