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IKP15N60T 데이터시트(Datasheet) 3 Page - Infineon Technologies AG

부품명 IKP15N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKP15N60T
TrenchStop Series
q
Power Semiconductors
3
Rev. 2.1 May 06
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
17
-
Rise time
tr
-
11
-
Turn-off delay time
td(off)
-
188
-
Fall time
tf
-
50
-
ns
Turn-on energy
Eon
-
0.22
-
Turn-off energy
Eoff
-
0.35
-
Total switching energy
Ets
Tj=25°C,
VCC=400V,IC=15A,
VGE=0 /15V,
RG=15Ω,
Lσ
1) =154nH,
Cσ
1) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.57
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
34
-
ns
Diode reverse recovery charge
Qrr
-
0.24
-
µC
Diode peak reverse recovery current
Irrm
-
10.4
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25°C,
VR=400V, IF=15A,
diF/dt=825A/µs
-
718
-
A/
µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
17
-
Rise time
tr
-
15
-
Turn-off delay time
td(off)
-
212
-
Fall time
tf
-
79
-
ns
Turn-on energy
Eon
-
0.34
-
Turn-off energy
Eoff
-
0.47
-
Total switching energy
Ets
Tj=175°C,
VCC=400V,IC=15A,
VGE=0/15V,
RG= 15 Ω
Lσ
1) =154nH,
Cσ
1) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.81
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
140
-
ns
Diode reverse recovery charge
Qrr
-
1.0
-
µC
Diode peak reverse recovery current
Irrm
-
14.7
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=175°C
VR=400V, IF=15A,
diF/dt=825A/µs
-
495
-
A/
µs
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.




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