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IKP15N60T 데이터시트(Datasheet) 6 Page - Infineon Technologies AG

부품명 IKP15N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKP15N60T
TrenchStop Series
q
Power Semiconductors
6
Rev. 2.1 May 06
0A
5A
10A
15A
20A
25A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
10Ω
20Ω
30Ω
40Ω
50Ω
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 15Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 15A,
Dynamic test circuit in Figure E)
25°C
50°C
75°C
100°C 125°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
VCE = 400V,
VGE = 0/15V, IC = 15A, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
IC = 0.21mA)




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