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IKW75N60T 데이터시트(Datasheet) 1 Page - Infineon Technologies AG

부품명 IKW75N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKW75N60T
TrenchStop Series
q
Power Semiconductors
1
Rev. 2.4 May 06
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
µs
Positive temperature coefficient in VCE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour
very high switching speed
Low EMI
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
1) for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Frequency Converters
Uninterrupted Power Supply
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IKW75N60T
600V
75A
1.5V
175
°C
K75T60
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
80
2)
75
Pulsed collector current, tp limited by Tjmax
ICpul s
225
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
-
225
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
IF
80
2)
75
Diode pulsed current, tp limited by Tjmax
IFpul s
225
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
3)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
tSC
5
µs
Power dissipation TC = 25°C
Ptot
428
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1) J-STD-020 and JESD-022
2) Value limited by bondwire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3-21




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