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IPB070N06NG 데이터시트(Datasheet) 2 Page - Infineon Technologies AG

부품명 IPB070N06NG
상세내용  OptiMOS® Power-Transistor
PDF  10 Pages
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IPB070N06N G IPP070N06N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
-
0.6
K/W
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm
2 cooling area3)
--
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=180 µA
2.1
3.0
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.01
1
µA
V DS=60 V, V GS=0 V,
T j=125 °C
-
1
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=60 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=80 A,
-
5.9
7
m
V GS=10 V, I D=80 A,
SMD version
-
5.6
6.7
Gate resistance
R G
-
1.5
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=80 A
49
98
-
S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
Values
Rev. 1.01
page 2
2006-06-19




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