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IPD350N06LG 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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IPD350N06LG 데이터시트(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPD350N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 29 A T C=100 °C 20 Pulsed drain current I D,pulse T C=25 °C 1) 116 Avalanche energy, single pulse E AS I D=29 A, R GS=25 Ω 80 mJ Reverse diode dv /dt dv /dt I D=29 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 68 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value 1) See figure 3 V DS 60 V R DS(on),max 35 m Ω I D 29 A Product Summary Type IPD350N06L G Package P G-TO252-3-11 Marking 350N06L Rev. 1.1 page 1 2006-05-08 |
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