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IPD640N06LG 데이터시트(Datasheet) 1 Page - Infineon Technologies AG

부품명 IPD640N06LG
상세내용  OptiMOS® Power-Transistor
PDF  9 Pages
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IPD640N06L G
OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I D
T C=25 °C
18
A
T C=100 °C
12
Pulsed drain current
I D,pulse
T C=25 °C
1)
72
Avalanche energy, single pulse
E AS
I D=18 A, R GS=25 Ω
43
mJ
Reverse diode dv /dt
dv /dt
I D=18 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage
V GS
±20
V
Power dissipation
P tot
T C=25 °C
47
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
1) See figure 3
V DS
60
V
R DS(on),max
64
m
I D
18
A
Product Summary
Type
IPD640N06L G
PG-TO252-3
Type
IPD640N06L G
Package
PG-TO252-3
Marking
640N06L
Rev. 1.2
page 1
2006-03-27




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