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IRF6631 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF6631
상세설명  DirectFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6631 데이터시트(HTML) 1 Page - International Rectifier

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www.irf.com
1
02/09/06
IRF6631
DirectFET
™ Power MOSFET ‚
Description
The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6631 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6631 has been optimized for parameters that are critical in synchronous buck including Rds(on) and
gate charge to minimize losses in the control FET socket.
PD - 97183
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.24mH, RG = 25Ω, IAS = 10A.
Notes:
SQ
SX
ST
MQ
MX
MT
MP
DirectFET
™ ISOMETRIC
SQ
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
ID = 13A
TJ = 25°C
TJ = 125°C
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 6.0m
Ω@ 10V 8.3mΩ@ 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
10
Max.
10
57
100
±20
30
13
13
0
5
10
15
20
25
30
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS= 24V
VDS= 15V
ID= 10A
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
12nC
4.4nC
1.1nC
10nC
7.3nC
1.8V
l RoHS compliant containing no lead or bromide

l Low Profile (<0.6 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET applications

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques



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