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2SK3060-ZJ 데이터시트(PDF) 1 Page - NEC |
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1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1997,2000 MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D13099EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 m Ω MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 m Ω MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V Drain Current (DC) ID(DC) ±70 A Drain Current (Pulse) Note1 ID(pulse) ±210 A Total Power Dissipation (TC = 25°C) PT 70 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 35 A Single Avalanche Energy Note2 EAS 122.5 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3060 TO-220AB 2SK3060-S TO-262 2SK3060-ZJ TO-263 2SK3060-Z TO-220SMD Note Note This package is produced only in Japan. (TO-220AB) (TO-262) (TO-263, TO-220SMD) The mark 5 shows major revised points. 5 |
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