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ST3S01PHD-TR 데이터시트(PDF) 10 Page - STMicroelectronics |
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ST3S01PHD-TR 데이터시트(HTML) 10 Page - STMicroelectronics |
10 / 17 page ST3S01PHD 10/17 I.C. CONSUMPTION (TA =-40 to 85°C, VCHARGE<VBATT, unless otherwise specified.) ESD PROTECTION TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified Tj =25°C) Figure 1 : Precharge Current Limit vs Temperature Figure 2 : Charge Drop Voltage vs Temperature Symbol Parameter Test Conditions Min. Typ. Max. Unit IBATT Current Consumption from Battery Pin VCMD-PWM=1.9V VCMD-MODE=0V or 1.9V µA VBATT= 3 to 5.25V VCHARGE= floating VCMD-REVERSE=0V 15 µA VBATT= 5.25V VCHARGE= floating VCMD-REVERSE=1.9V 140 300 µA ICHARGE Current Consumption from the Charge Pin VCHARGE= 5.25V VBATT= floating VCMD-REVERSE=0V VCMD-PWM=1.9V VCMD-MODE=0V or 1.9V 78 250 µA Symbol Parameter Test Conditions Min. Typ. Max. Unit ESD Electrostatic Discharge Immunity for VCHARGE and VBATT pins TA=25°C Human Body Method MIL STD 833D-3015.7 ±4 kV |
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