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M29W160DT 데이터시트(PDF) 1 Page - STMicroelectronics |
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M29W160DT 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 29 page 1/29 PRELIMINARY DATA January 2001 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. M29W160DT M29W160DB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 70ns s PROGRAMMING TIME –10 µs per Byte/Word typical s 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Program and Erase algorithms s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s SECURITY MEMORY BLOCK s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W160DT: 22C4h – Bottom Device Code M29W160DB: 2249h Figure 1. Packages 44 1 TSOP48 (N) 12 x 20mm SO44 (M) LFBGA48 (ZA) 8 x 6 solder balls FBGA |
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