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BTB12-800TW 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 BTB12-800TW
상세설명  12A TRIACS
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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®
BTA/BTB12 and T12 Series
SNUBBERLESS™, LOGIC LEVEL & STANDARD
12A TRIACS
September 2002 - Ed: 6A
MAIN FEATURES:
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB12 and T12 triac series is
suitable for general purpose AC switching. They
can
be
used
as
an
ON/OFF
function
in
applications
such
as
static
relays,
heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T12
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. Logic level versions are designed
to interface directly with low power drivers such as
microcontrollers. By using an internal ceramic
pad, the BTA series provides voltage insulated tab
(rated
at
2500V
RMS)
complying
with
UL
standards (File ref.: E81734)
Symbol
Value
Unit
IT(RMS)
12
A
VDRM/VRRM
600 and 800
V
IGT (Q
1)
5 to 50
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
D²PAK/TO-220AB
Tc = 105°C
12
A
TO-220AB Ins.
Tc = 90°C
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz
t = 20 ms
120
A
F = 60 Hz
t = 16.7 ms
126
I
²tI²t Value for fusing
tp = 10 ms
78
A²s
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125°C
50
A/µs
VDSM/VRSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25°C
VDRM/VRRM
+ 100
V
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
PG(AV)
Average gate power dissipation
Tj = 125°C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
G
A2
A1
G
A2
A2
A1
A2
A2
A1
G
D2PAK
(T12-G)
G
A2
A1
TO-220AB Insulated
(BTA12)
TO-220AB
(BTB12)


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