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BTB12-800TW 데이터시트(PDF) 1 Page - STMicroelectronics |
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BTB12-800TW 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 7 page 1/7 ® BTA/BTB12 and T12 Series SNUBBERLESS™, LOGIC LEVEL & STANDARD 12A TRIACS September 2002 - Ed: 6A MAIN FEATURES: DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 and 800 V IGT (Q 1) 5 to 50 mA ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) D²PAK/TO-220AB Tc = 105°C 12 A TO-220AB Ins. Tc = 90°C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 120 A F = 60 Hz t = 16.7 ms 126 I ²tI²t Value for fusing tp = 10 ms 78 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C G A2 A1 G A2 A2 A1 A2 A2 A1 G D2PAK (T12-G) G A2 A1 TO-220AB Insulated (BTA12) TO-220AB (BTB12) |
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