BAS12 datasheet(2/7 Pages) PHILIPS

부품명	BAS12

상세설명	Controlled avalanche rectifiers

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제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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2 / 7 page

1996 Sep 26

2

Not recommended for new designs

Philips Semiconductors

Product speciﬁcation

Controlled avalanche rectiﬁers

BAS11; BAS12

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Available in ammo-pack.

DESCRIPTION

Rectifier diodes in cavity free

cylindrical SOD91 glass packages,

incorporating Implotec

™(1)

technology.

(1) Implotec is a trademark of Philips.

These packages are hermetically

sealed and fatigue free as coefficients

of expansion of all used parts are

matched.

Fig.1 Simplified outline (SOD91) and symbol.

MAM196

k

a

Marking code BAS11: S11.

Marking code BAS12: S12.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

BAS11

−

300

V

BAS12

−

400

V

VRWM

working reverse voltage

BAS11

−

300

V

BAS12

−

400

V

VR

continuous reverse voltage

BAS11

−

300

V

BAS12

−

400

V

IF(AV)

average forward current

averaged over any 20 ms period;

Ttp =75 °C; lead length = 10 mm;

see Figs 2 and 4

−

350

mA

averaged over any 20 ms period;

Tamb =30 °C; PCB mounting

(see Fig.8); see Figs 3 and 4

−

300

mA

IFSM

non-repetitive peak forward current

t = 10 ms half sinewave;

Tj =Tj max prior to surge;

VR =VRRMmax

−

4A

PRRM

repetitive peak reverse power

dissipation

t=10

µs square wave; f = 50 Hz;

Tamb =25 °C

−

75

W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−65

+150

°C

유사한 부품 번호 - BAS12

제조업체	부품명	데이터시트	상세설명
Pan Jit International I...	BAS121	121Kb / 3P	SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE
	BAS121A	121Kb / 3P	SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE
	BAS121C	121Kb / 3P	SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE
	BAS121S	121Kb / 3P	SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE
Siemens Semiconductor G...	BAS125	104Kb / 5P	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)

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유사한 설명 - BAS12

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	BYW54	46Kb / 7P	Controlled avalanche rectifiers 1996 Oct 03
NXP Semiconductors	1N5059	74Kb / 7P	Controlled avalanche rectifiers 1996 Jun 19
Shenzhen Taychipst Elec...	BYG50D	4Mb / 3P	Controlled avalanche rectifiers
NXP Semiconductors	BYM56	48Kb / 7P	Controlled avalanche rectifiers 1996 May 24
	BYD11	46Kb / 7P	Controlled avalanche rectifiers 1996 Sep 26
	BYG50	41Kb / 6P	Controlled avalanche rectifiers 1996 May 24
New Jersey Semi-Conduct...	BYW54	136Kb / 2P	Controlled avalanche rectifiers
Shenzhen Taychipst Elec...	BYD13D	3Mb / 3P	Controlled avalanche rectifiers
NXP Semiconductors	BYD12	49Kb / 8P	Controlled avalanche rectifiers 1998 Dec 03
NXP Semiconductors	BYD13	39Kb / 7P	Controlled avalanche rectifiers 1996 May 24

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BAS12 데이터시트(PDF) 2 Page - NXP Semiconductors

BAS12 데이터시트(HTML) 2 Page - NXP Semiconductors

유사한 부품 번호 - BAS12

유사한 설명 - BAS12

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