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BAT140 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 BAT140
상세설명  Schottky barrier double diodes
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAT140 데이터시트(HTML) 3 Page - NXP Semiconductors

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1997 Oct 03
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
40
V
IF
continuous forward current
1A
IF(AV)
average forward current
Tamb =65 °C;
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
1A
IFSM
non-repetitive peak forward current
t = 8.3
µs half sinewave;
JEDEC method
10
A
IRSM
non-repetitive peak reverse current
tp = 100 µs
0.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
125
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.5
IF = 100 mA; note 1
280
330
mV
IF = 1 A; note 1
460
500
mV
IR
reverse current
VR = 10 V; note 1; see Fig.6
15
40
µA
VR = 40 V; note 1; see Fig.6
60
300
µA
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.7
65
80
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W


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