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BC847BPN 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BC847BPN 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 26 2 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistor BC847BPN FEATURES • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and boardspace • No mutual interference between the transistors. APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN/PNP transistor pair in an SC-88; SOT363 plastic package. MARKING TYPE NUMBER MARKING CODE BC847BPN 13t PINNING PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 Fig.1 Simplified outline (SC-88; SOT363) and symbol. handbook, halfpage 13 2 4 5 6 Top view MAM341 13 2 TR1 TR2 6 4 5 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW |
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