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BCW30 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 BCW30
상세설명  PNP general purpose transistors
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCW30 데이터시트(HTML) 3 Page - NXP Semiconductors

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1999 Apr 13
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BCW29; BCW30
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −32 V
−−−100 nA
IE = 0; VCB = −32 V; Tj = 100 °C
−−−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100 nA
hFE
DC current gain
IC = −10 µA; VCE = −5V
BCW29
90
BCW30
150
DC current gain
IC = −2 mA; VCE = −5V
BCW29
120
260
BCW30
215
500
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−−80
−300 mV
IC = −50 mA; IB = −2.5 mA
−−150 −
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−−720 −
mV
IC = −50 mA; IB = −2.5 mA
−−810 −
mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5V
−600 −−750 mV
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
4.5
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
−−
10
dB


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