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BCY59VIII 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 BCY59VIII
상세설명  NPN switching transistors
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCY59VIII 데이터시트(HTML) 3 Page - NXP Semiconductors

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1997 Jun 17
3
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BCY58
32
V
BCY59
45
V
VCEO
collector-emitter voltage
open base
BCY58
32
V
BCY59
45
V
VEBO
emitter-base voltage
open collector
7V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 45 °C
340
mW
Tcase ≤ 45 °C
1W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
200
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
450
K/W
Rth j-c
thermal resistance from junction to case
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
BCY58
IE = 0; VCB =32V
−−
10
nA
IE = 0; VCB = 32 V; Tj = 150 °C
−−
10
µA
ICBO
collector cut-off current
BCY59
IE = 0; VCB =45V
−−
10
nA
IE = 0; VCB = 45 V; Tj = 150 °C
−−
10
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
−−
10
nA
hFE
DC current gain
IC =10 µA; VCE =5V
BCY58/VII; BCY59/VII
20
BCY58/VIII; BCY59/VIII
20
95
BCY58/IX; BCY59/IX
40
190
BCY58/X; BCY59/X
100
300


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