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BD139 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BD139 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 12 3 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 THERMAL CHARACTERISTICS Note 1. Refer to TO-126; SOT32 standard mounting conditions. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W Rth j-mb thermal resistance from junction to mounting base 10 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V −− 100 nA IE = 0; VCB =30V; Tj = 125 °C −− 10 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 100 nA hFE DC current gain VCE = 2 V; (see Fig.2) IC = 5 mA 40 −− IC = 150 mA 63 − 250 IC = 500 mA 25 −− DC current gain IC = 150 mA; VCE =2V; (see Fig.2) BD135-10; BD137-10; BD139-10 63 − 160 BD135-16; BD137-16; BD139-16 100 − 250 VCEsat collector-emitter saturation voltage IC = 500 mA; IB =50mA −− 0.5 V VBE base-emitter voltage IC = 500 mA; VCE =2V −− 1V fT transition frequency IC = 50 mA; VCE =5V; f = 100 MHz − 190 − MHz DC current gain ratio of the complementary pairs I C = 150 mA; VCE =2V − 1.3 1.6 h FE1 h FE2 ----------- |
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