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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BF1100WR 데이터시트(PDF) 9 Page - NXP Semiconductors |
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BF1100WR 데이터시트(HTML) 9 Page - NXP Semiconductors |
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9 / 14 page  1995 Apr 25 9 Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR Fig.18 Input admittance as a function of frequency; typical values. VDS = 9 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. handbook, halfpage 10 3 MLD181 102 10 10 1 10 2 10 1 y is (mS) f (MHz) b is g is VDS = 9 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. Fig.19 Reverse transfer admittance and phase as a function of frequency; typical values. 10 3 MLD182 102 10 10 3 10 2 10 1 y rs 10 3 10 10 1 2 rs ( µS) f (MHz) rs yrs (deg) ϕ ϕ Fig.20 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 9 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. 10 3 MLD183 102 10 1 10 2 10 1 10 10 2 y fs (mS) y fs f (MHz) fs fs (deg) ϕ ϕ Fig.21 Output admittance as a function of frequency; typical values. VDS = 9 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. handbook, halfpage 10 3 MLD184 102 10 10 1 10 1 10 2 yos (mS) f (MHz) bos gos |
유사한 부품 번호 - BF1100WR |
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유사한 설명 - BF1100WR |
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