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BF862 데이터시트(PDF) 4 Page - NXP Semiconductors |
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BF862 데이터시트(HTML) 4 Page - NXP Semiconductors |
4 / 7 page 1999 Jun 29 4 Philips Semiconductors Preliminary specification N-channel junction FET BF862 STATIC CHARACTERISTICS Tj =25 °C unless otherwise specified. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VGS =0; VDS = 8 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IGS = −1 µA; VDS =0 −20 −− V VGS gate-source forward voltage VDS =0; IG =1mA −− 1V VGS (off) gate-source cut-off voltage VDS =8V; ID =1 µA −−0.7 − V IGSS reverse gate current VGS = −15 V; VDS =0 −− −1nA IDSS drain-source current VGS =0; VDS =8V 10 − 25 mA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs common source forward transfer admittance Tj =25 °C30 40 − mS gos common source output conductance Tj =25 °C −− 400 µS Ciss input capacitance f = 1 MHz − 10 − pF Crss reverse transfer capacitance f = 1 MHz − 2.5 − pF en equivalent noise input voltage f = 100 kHz − 0.8 − nV/ √Hz fT transition frequency − 640 − MHz |
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