전자부품 데이터시트 검색엔진 |
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TPCA8007-H 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8007-H 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page TPCA8007-H 2004-03-08 3 TENTATIVE Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, V DS = 0 V ±100 nA Drain cut-OFF current IDSS VDS = 100 V, V GS = 0 V 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 5.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 10 A 30 47 m Ω Forward transfer admittance |Yfs| VDS = 10 V , ID = 10 A 9.5 19 S Input capacitance Ciss 1000 Reverse transfer capacitance Crss 21 Output capacitance Coss VDS = 10 V , VGS = 0 V , f = 1 MHz 500 pF Rise time tr (2) Turn-ON time ton (13) Fall time tf 3 Switching time Turn-OFF time toff Duty < = 1%, tw = 10 µs 13 ns Total gate charge (gate-source plus gate-drain) Qg 15 Gate-source charge 1 Qgs1 7.2 Gate-drain (“miller”) charge Qgd 5.0 Gate switch charge QSW VDD ∼ − 80 V, VGS = 10 V , ID = 20 A 8.5 nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (tw=1ms ) IDRP 40 A Forward voltage (diode) VDSF IDR = 20 A, V GS = 0 V −1.7 V VDD ∼ − 50 V 0 V VGS 10 V ID = 10 A VOUT |
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