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SSF6N80A 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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SSF6N80A 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page Advanced Power MOSFET FEATURES TO-3PF 1.Gate 2. Drain 3. Source 3 2 1 Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ V DS = 800V Low R DS(ON) : 1.472 Ω (Typ.) Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (T C=25 ΟC) Continuous Drain Current (T C=100 ΟC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T C=25 ΟC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Characteristic Value Units Symbol I DM V GS E AS I AR E AR dv/dt I D P D T J , TSTG T L A V mJ A mJ V/ns W W/ ΟC A ΟC V DSS V O 1 O 2 O 3 O 1 O 1 Thermal Resistance Junction-to-Case Junction-to-Ambient R θJC R θJA ΟC/W Characteristic Max. Units Symbol Typ. SSF6N80A BV DSS = 800 V R DS(on) = 2.0 Ω I D = 4.5 A 800 4.5 2.8 24 486 4.5 9 2.0 90 0.72 - 55 to +150 300 1.39 40 -- -- 30 + _ ©1999 Fairchild Semiconductor Corporation Rev. B |
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