전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

SST39VF1601 데이터시트(PDF) 2 Page - Silicon Storage Technology, Inc

부품명 SST39VF1601
상세설명  16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
Download  32 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST39VF1601 데이터시트(HTML) 2 Page - Silicon Storage Technology, Inc

  SST39VF1601 Datasheet HTML 1Page - Silicon Storage Technology, Inc SST39VF1601 Datasheet HTML 2Page - Silicon Storage Technology, Inc SST39VF1601 Datasheet HTML 3Page - Silicon Storage Technology, Inc SST39VF1601 Datasheet HTML 4Page - Silicon Storage Technology, Inc SST39VF1601 Datasheet HTML 5Page - Silicon Storage Technology, Inc SST39VF1601 Datasheet HTML 6Page - Silicon Storage Technology, Inc SST39VF1601 Datasheet HTML 7Page - Silicon Storage Technology, Inc SST39VF1601 Datasheet HTML 8Page - Silicon Storage Technology, Inc SST39VF1601 Datasheet HTML 9Page - Silicon Storage Technology, Inc Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 32 page
background image
2
Preliminary Specifications
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
©2003 Silicon Storage Technology, Inc.
S71223-03-000
11/03
To meet high density, surface mount requirements, the
SST39VF160x/320x/640x are offered in 48-lead TSOP
and 48-ball TFBGA packages. See Figures 1 and 2 for
pin assignments.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
The SST39VF160x/320x/640x also have the Auto Low
Power mode which puts the device in a near standby
mode after data has been accessed with a valid Read
operation. This reduces the IDD active read current from
typically 9 mA to typically 3 µA. The Auto Low Power mode
reduces the typical IDD active read current to the range of 2
mA/MHz of Read cycle time. The device exits the Auto Low
Power mode with any address transition or control signal
transition used to initiate another Read cycle, with no
access time penalty. Note that the device does not enter
Auto-Low Power mode after power-up with CE# held
steadily low, until the first address transition or CE# is
driven high.
Read
The Read operation of the SST39VF160x/320x/640x is
controlled by CE# and OE#, both have to be low for the
system to obtain data from the outputs. CE# is used for
device selection. When CE# is high, the chip is dese-
lected and only standby power is consumed. OE# is the
output control and is used to gate data from the output
pins. The data bus is in high impedance state when
either CE# or OE# is high. Refer to the Read cycle timing
diagram for further details (Figure 3).
Word-Program Operation
The SST39VF160x/320x/640x are programmed on a
word-by-word basis. Before programming, the sector
where the word exists must be fully erased. The Program
operation is accomplished in three steps. The first step is
the three-byte load sequence for Software Data Protection.
The second step is to load word address and word data.
During the Word-Program operation, the addresses are
latched on the falling edge of either CE# or WE#, which-
ever occurs last. The data is latched on the rising edge of
either CE# or WE#, whichever occurs first. The third step is
the internal Program operation which is initiated after the
rising edge of the fourth WE# or CE#, whichever occurs
first. The Program operation, once initiated, will be com-
pleted within 10 µs. See Figures 4 and 5 for WE# and CE#
controlled Program operation timing diagrams and Figure
19 for flowcharts. During the Program operation, the only
valid reads are Data# Polling and Toggle Bit. During the
internal Program operation, the host is free to perform addi-
tional tasks. Any commands issued during the internal Pro-
gram operation are ignored. During the command
sequence, WP# should be statically held high or low.
Sector/Block-Erase Operation
The Sector- (or Block-) Erase operation allows the system
to erase the device on a sector-by-sector (or block-by-
block) basis. The SST39VF160x/320x/640x offer both Sec-
tor-Erase and Block-Erase mode. The sector architecture
is based on uniform sector size of 2 KWord. The Block-
Erase mode is based on uniform block size of 32 KWord.
The Sector-Erase operation is initiated by executing a six-
byte command sequence with Sector-Erase command
(30H) and sector address (SA) in the last bus cycle. The
Block-Erase operation is initiated by executing a six-byte
command sequence with Block-Erase command (50H)
and block address (BA) in the last bus cycle. The sector or
block address is latched on the falling edge of the sixth
WE# pulse, while the command (30H or 50H) is latched on
the rising edge of the sixth WE# pulse. The internal Erase
operation begins after the sixth WE# pulse. The End-of-
Erase operation can be determined using either Data#
Polling or Toggle Bit methods. See Figures 9 and 10 for tim-
ing waveforms and Figure 23 for the flowchart. Any com-
mands issued during the Sector- or Block-Erase operation
are ignored. When WP# is low, any attempt to Sector-
(Block-) Erase the protected block will be ignored. During
the command sequence, WP# should be statically held
high or low.
Erase-Suspend/Erase-Resume Commands
The Erase-Suspend operation temporarily suspends a
Sector- or Block-Erase operation thus allowing data to be
read from any memory location, or program data into any
sector/block that is not suspended for an Erase operation.
The operation is executed by issuing one byte command
sequence with Erase-Suspend command (B0H). The
device automatically enters read mode typically within 20
µs after the Erase-Suspend command had been issued.
Valid data can be read from any sector or block that is not
suspended from an Erase operation. Reading at address
location within erase-suspended sectors/blocks will output
DQ2 toggling and DQ6 at “1”. While in Erase-Suspend
mode, a Word-Program operation is allowed except for the
sector or block selected for Erase-Suspend.


유사한 부품 번호 - SST39VF1601

제조업체부품명데이터시트상세설명
logo
Silicon Storage Technol...
SST39VF1601 SST-SST39VF1601 Datasheet
509Kb / 32P
   16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601C SST-SST39VF1601C Datasheet
379Kb / 39P
   16 Mbit (x16) Multi-Purpose Flash Plus
logo
Microchip Technology
SST39VF1601C MICROCHIP-SST39VF1601C Datasheet
1Mb / 38P
   16 Mbit (x16) Multi-Purpose Flash Plus
Rev. B / May 2018
SST39VF1601C-70-4C-B3KE MICROCHIP-SST39VF1601C-70-4C-B3KE Datasheet
1Mb / 38P
   16 Mbit (x16) Multi-Purpose Flash Plus
Rev. B / May 2018
SST39VF1601C-70-4C-B3QE MICROCHIP-SST39VF1601C-70-4C-B3QE Datasheet
1Mb / 38P
   16 Mbit (x16) Multi-Purpose Flash Plus
Rev. B / May 2018
More results

유사한 설명 - SST39VF1601

제조업체부품명데이터시트상세설명
logo
Silicon Storage Technol...
SST39VF1601 SST-SST39VF1601_05 Datasheet
509Kb / 32P
   16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF6401B SST-SST39VF6401B Datasheet
476Kb / 30P
   64 Mbit (x16) Multi-Purpose Flash Plus
logo
Microchip Technology
SST39VF6401B MICROCHIP-SST39VF6401B_V01 Datasheet
4Mb / 38P
   64 Mbit (x16) Multi-Purpose Flash Plus
Revision C May 2018
SST39VF6401B MICROCHIP-SST39VF6401B Datasheet
530Kb / 36P
   64 Mbit (x16) Multi-Purpose Flash Plus
08/15
SST39VF3201B-70-4I-EKE MICROCHIP-SST39VF3201B-70-4I-EKE Datasheet
904Kb / 29P
   32 Mbit (x16) Multi-Purpose Flash Plus
1/09
SST39VF3201C MICROCHIP-SST39VF3201C Datasheet
264Kb / 37P
   32 Mbit (x16) Multi-Purpose Flash Plus
07/14
SST39VF3201C MICROCHIP-SST39VF3201C_V01 Datasheet
1Mb / 36P
   32-Mbit (x16) Multi-Purpose Flash Plus
REVISION C April 2020
logo
Silicon Storage Technol...
SST39VF3201B SST-SST39VF3201B_13 Datasheet
904Kb / 29P
   32 Mbit x16 Multi-Purpose Flash Plus
SST39WF1601 SST-SST39WF1601_11 Datasheet
618Kb / 27P
   16 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601C SST-SST39VF1601C Datasheet
379Kb / 39P
   16 Mbit (x16) Multi-Purpose Flash Plus
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com