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FDS4935BZ 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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1 / 5 page 2006 Fairchild Semiconductor Corporation FDS4935BZ Rev B1 (W) FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features –6.9 A, –30 V. RDS(ON) = 22 m @ VGS = –10 V RDS(ON) = 35 m @ VGS = – 4.5 V Extended VGSS range (–25V) for battery applications ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) High power and current handling capability S D S S SO-8 D D D G D2 D2 D1 D1 S2 G2 S1 G1 Pin 1 SO-8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDS\ Drain-Source Voltage –30 V VGS Gate-Source Voltage +25 V ID Drain Current – Continuous (Note 1a) –6.9 A – Pulsed –50 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 PD (Note 1c) 0.9 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 C Thermal Characteristics R JA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W R JC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4935BZ FDS4935BZ 13’’ 12mm 2500 units 4 3 2 1 5 6 7 8 Q1 Q2 tm September 2006 |
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