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FDS4935BZ 데이터시트(PDF) 1 Page - Fairchild Semiconductor

부품명 FDS4935BZ
상세설명  Dual 30 Volt P-Channel PowerTrench MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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2006 Fairchild Semiconductor Corporation
FDS4935BZ Rev B1 (W)
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench MOSFET
General Description
This
P-Channel
MOSFET
has
been
designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
–6.9 A, –30 V.
RDS(ON) = 22 m
@ VGS = –10 V
RDS(ON) = 35 m
@ VGS = – 4.5 V
Extended VGSS range (–25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2
D2
D1
D1
S2
G2
S1
G1
Pin 1
SO-8
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS\
Drain-Source Voltage
–30
V
VGS
Gate-Source Voltage
+25
V
ID
Drain Current
– Continuous
(Note 1a)
–6.9
A
– Pulsed
–50
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
PD
(Note 1c)
0.9
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
C
Thermal Characteristics
R JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4935BZ
FDS4935BZ
13’’
12mm
2500 units
4
3
2
1
5
6
7
8
Q1
Q2
tm
September 2006


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