AM29LV641ML120EI datasheet(39/60 Pages) SPANSION

부품명	AM29LV641ML120EI

상세설명	64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

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39 / 60 page

December 21, 2005

Am29LV641MH/L

37

DA TA SH EET

DC CHARACTERISTICS

CMOS Compatible

Notes:

1. On the WP#/ACC pin only, the maximum input load current when WP# = V

IL is ± 5.0 µA.

2. The I

CC current listed is typically less than 2 mA/MHz, with OE# at VIH.

3. Maximum I

CC specifications are tested with VCC = VCCmax.

4. I

CC active while Embedded Erase or Embedded Program is in progress.

5. Automatic sleep mode enables the low power mode when addresses remain stable for t

ACC + 30 ns. TIf VIO < VCC, maximum VIL

for CE# and DQ I/Os is 0.3 V

IO. If VIO < VCC, minimum VIH for CE# and DQ I/Os is 0.7 VIO. Maximum VIH for these connections is

V

IO + 0.3 V

6. V

CC voltage requirements.

7. V

IO voltage requirements.

8. Not 100% tested.

9. Includes RY/BY#

Parameter

Symbol

Parameter Description

(Notes)

Test Conditions

Min

Typ

Max

Unit

I

LI

Input Load Current (1)

V

IN = VSS to VCC,

V

CC = VCC max

±1.0

µA

I

LIT

A9, ACC Input Load Current

V

CC = VCC max; A9 = 12.5 V

35

µA

I

LR

Reset Leakage Current

V

CC = VCC max; RESET# = 12.5 V

35

µA

I

LO

Output Leakage Current

V

OUT = VSS to VCC,

V

CC = VCC max

±1.0

µA

I

CC1

V

CC Active Read Current

(2, 3)

CE# = V

IL, OE# = VIH,

5 MHz

15

20

mA

1 MHz

15

20

I

CC2

V

CC Initial Page Read Current (2, 3)

CE# = V

IL, OE# = VIH

30

50

mA

I

CC3

V

CC Intra-Page Read Current (2, 3)

CE# = V

IL, OE# = VIH

10

20

mA

I

CC4

V

CC Active Write Current (3, 4)

CE# = V

IL, OE# = VIH

50

60

mA

I

CC5

V

CC Standby Current (3)

CE#, RESET# = V

CC ± 0.3 V,

WP# = V

IH

15

µA

I

CC6

V

CC Reset Current (3)

RESET# = V

SS ± 0.3 V, WP# = VIH

15

µA

I

CC7

Automatic Sleep Mode (3, 5)

V

IH = VCC ± 0.3 V;

V

IL = VSS ± 0.3 V, WP# = VIH

15

µA

I

ACC

ACC Accelerated Program Current (3) CE# = V

IL, OE# = VIH

ACC pin

10

20

mA

V

CC pin

30

60

mA

V

IL1

Input Low Voltage 1(5, 6)

–0.5

0.8

V

IH1

Input High Voltage 1 (5, 6)

1.9

V

CC + 0.5

V

IL2

Input Low Voltage 2 (5, 7)

–0.5

0.3 x V

IO

V

IH2

Input High Voltage 2 (5, 7)

1.9

V

IO + 0.5

V

HH

Voltage for ACC Program

Acceleration

V

CC = 2.7 –3.6 V

11.5

12.5

V

ID

Voltage for Autoselect and Temporary

Sector Unprotect

V

CC = 2.7 –3.6 V

11.5

12.5

V

OL

Output Low Voltage

I

OL = 4.0 mA, VCC = VCC min = VIO

0.15 x V

IO

V

OH1

Output High Voltage

I

OH = –2.0 mA, VCC = VCC min = VIO

0.85 V

IO

V

OH2

I

OH = –100 µA, VCC = VCC min = VIO

V

IO–0.4

V

LKO

Low V

CC Lock-Out Voltage (8)

2.3

2.5

V

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Advanced Micro Devices	AM29LV641ML120EI	1Mb / 60P	64 Megabit (4 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control

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